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Title: Structural and electrical properties of sol-gel spin coated indium doped cadmium oxide thin films

The indium doped CdO thin films have been prepared by the sol-gel spin coating technique and the influence of indium doping concentration on the structural and electrical properties of the deposited films has been investigated. The indium doping concentration in the solution has been varied from 0-10 wt% insteps of 2wt%. A indium doping concentration of 6wt% has been found to be optimum for preparing the films and at this stage a minimum resistivity of 5.92×10{sup −4}Ω cm and a maximum carrier concentration of 1.20×10{sup 20}cm{sup −3} have been realized.
Authors:
 [1] ; ;  [2]
  1. Department of Physics, M.V.M Govt. Arts College for Women, Dindigul-624001 (India)
  2. Department of Physcis, Gandhigram Rural Institute, Gandhigram-624302 (India)
Publication Date:
OSTI Identifier:
22269216
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1591; Journal Issue: 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CADMIUM OXIDES; DEPOSITS; DOPED MATERIALS; ELECTRICAL PROPERTIES; INDIUM; SOL-GEL PROCESS; SPIN; THIN FILMS