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Title: Piezoelectric effect in InAs/InP quantum rod nanowires grown on silicon substrate

We report on the evidence of a strain-induced piezoelectric field in wurtzite InAs/InP quantum rod nanowires. This electric field, caused by the lattice mismatch between InAs and InP, results in the quantum confined Stark effect and, as a consequence, affects the optical properties of the nanowire heterostructure. It is shown that the piezoelectric field can be screened by photogenerated carriers or removed by increasing temperature. Moreover, a dependence of the piezoelectric field on the quantum rod diameter is observed in agreement with simulations of wurtzite InAs/InP quantum rod nanowire heterostructures.
Authors:
; ;  [1] ;  [2] ; ;  [3] ;  [4]
  1. Université de Lyon, Institut des Nanotechnologies de Lyon (INL)-UMR5270-CNRS, INSA-Lyon, 7 avenue Jean Capelle, 69621 Villeurbanne (France)
  2. Université de Monastir, Laboratoire de Micro-Optoélectronique et Nanostructures (LMON), Faculté des Sciences, Avenue de l'environnement, 5019 Monastir (Tunisia)
  3. Université de Lyon, Institut des Nanotechnologies de Lyon (INL)-UMR5270-CNRS, Ecole Centrale de Lyon, 36 avenue Guy de Collongue, 69134 Ecully (France)
  4. Laboratoire de Photonique et de Nanostructures (LPN), UPR20-CNRS, route de Nozay, 91460 Marcoussis (France)
Publication Date:
OSTI Identifier:
22269205
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL DEFECTS; INDIUM ARSENIDES; INDIUM PHOSPHIDES; OPTICAL PROPERTIES; PIEZOELECTRICITY; QUANTUM WIRES; SILICON; STARK EFFECT; SUBSTRATES