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Title: The discrepancies between theory and experiment in the optical emission of monolayer In(Ga)N quantum wells revisited by transmission electron microscopy

Quantitative high resolution transmission electron microscopy studies of intentionally grown 1InN/nGaN short-period superlattices (SLs) were performed. The structures were found to consist of an In{sub x}Ga{sub 1−x}N monolayer with an Indium content of x = 0.33 instead of the intended x = 1. Self-consistent calculations of the band structures of 1In{sub 0.33}Ga{sub 0.67}N/nGaN SLs were carried out, including a semi-empirical correction for the band gaps. The calculated band gap, E{sub g,} as well as its pressure derivative, dE{sub g}/dp, are in very good agreement with the measured photoluminescence energy, E{sub PL}, and its pressure derivative, dE{sub PL}/dp, for a series of 1In{sub 0.33}Ga{sub 0.67}N/nGaN samples with n ranging from 2 to 40. This resolves a discrepancy found earlier between measured and calculated optical emission properties, as those calculations were made with the assumption of a 1InN/nGaN SL composition.
Authors:
; ;  [1] ; ;  [2] ;  [3] ; ;  [4]
  1. Institute of High Pressures Physics, UNIPRESS, 01-142 Warsaw (Poland)
  2. Leibniz Institute for Crystal Growth, 1248 Berlin (Germany)
  3. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, Beijing (China)
  4. Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C (Denmark)
Publication Date:
OSTI Identifier:
22269203
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM; INDIUM; PHOTOLUMINESCENCE; QUANTUM WELLS; SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY