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Title: Evolution of ion-induced nanoparticle arrays on GaAs surfaces

We have examined the evolution of irradiation-induced Ga nanoparticle (NP) arrays on GaAs surfaces. Focused-ion-beam irradiation of pre-patterned GaAs surfaces induces monotonic increases in the NP volume and aspect ratio up to a saturation ion dose, independent of NP location within the array. Beyond the saturation ion dose, the NP volume continues to increase monotonically while the NP aspect ratio decreases monotonically. In addition, the NP volumes (aspect ratios) are highest (lowest) for the corner NPs. We discuss the relative influences of bulk and surface diffusion on the evolution of Ga NP arrays.
Authors:
; ; ; ; ;  [1] ;  [2]
  1. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)
  2. Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)
Publication Date:
OSTI Identifier:
22269202
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; ION BEAMS; IRRADIATION; SATURATION; SURFACES