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Title: Morphology of oxygen precipitates in silicon wafers pre-treated by rapid thermal annealing

The morphology of oxygen precipitates in Czochralski silicon wafers pre-treated by rapid thermal annealing (RTA) and subjected to a heat treatment in the temperature range between 800 °C and 1000 °C was investigated by scanning transmission electron microscopy. The samples were pre-treated by RTA in order to establish a defined supersaturation of vacancies. It was found that in such vacancy-rich samples subjected to an annealing at 800 °C three dimensional dendrites are formed. Until now, it was known that during annealing at 800 °C plate-like oxygen precipitates are formed.
Authors:
; ;  [1] ;  [2]
  1. IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany)
  2. Siltronic AG, Hanns-Seidel-Platz 4, 81737 München (Germany)
Publication Date:
OSTI Identifier:
22269201
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; MORPHOLOGY; OXYGEN; SILICON; SUPERSATURATION; TEMPERATURE RANGE 1000-4000 K; TRANSMISSION ELECTRON MICROSCOPY; VACANCIES