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Title: Semiconducting properties of amorphous GaZnSnO thin film based on combinatorial electronic structures

Semiconducting properties and electronic structures of amorphous GaZnSnO (GZTO) thin films are investigated with respect to metal cationic composition. An increase of the cationic Sn ratio resulted in an increase of the carrier concentration and a decrease of the mobility of the films. Combinatorial analysis revealed that the electrical characteristics of GZTO films are strongly correlated to changes in electronic structure. The increase in carrier concentration is related to the generation of vacancies by the changes of oxygen coordination around the cationic metal and the shallow band edge state below the conduction band. On the other hand, the decrease of mobility can be explained by the deep band edge state, and the difference between the experimental conduction band and simulated conduction band by the combinatorial electronic structure based on the chemical composition.
Authors:
 [1] ;  [2] ;  [3] ;  [4]
  1. Department of Physics, Dankook University, Cheonan 300-714 (Korea, Republic of)
  2. Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)
  3. Functional Coatings Research Group, Korea Institute of Materials Science, Changwon, Gyeongnam 641-831 (Korea, Republic of)
  4. Division of Physics and Semiconductor Science, Dongguk University, Seoul 100-715 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22269196
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL COMPOSITION; ELECTRONIC STRUCTURE; GALLIUM; OXIDES; THIN FILMS; TIN; VACANCIES; ZINC