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Title: Silicon buried gratings for dielectric laser electron accelerators

This paper describes design and simulations of dielectric laser electron accelerators that achieve Gigavolt-per-meter (GV/m) accelerating gradients and wide electron channels (>1 μm). The accelerator design is based on a silicon buried grating structure that enables flexible phase synchronization, large electron channel fields, and low standing-wave ratio in the material. This design increases the accelerating gradients to more than double those of reported quartz grating accelerators, thereby reducing the input laser fluence by 60% for the same accelerating gradient. With a 100 fs pulsed laser, our silicon buried gratings can achieve a maximum gradient of 1.1 GV/m, indicating that these accelerators have potential for numerous electron-accelerator applications.
Authors:
 [1] ;  [2]
  1. Bell Labs, Alcatel-Lucent, 791 Holmdel Road, Holmdel, New Jersey 07733 (United States)
  2. E. L. Ginzton Lab., Stanford University, Stanford, California 94305 (United States)
Publication Date:
OSTI Identifier:
22269193
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACCELERATORS; DIELECTRIC MATERIALS; ELECTRONS; GRATINGS; LASERS; SILICON; STANDING WAVES