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Title: Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory

The total ionizing dose (TID) effect of gamma-ray (γ-ray) irradiation on HfOx based resistive random access memory was investigated by electrical and material characterizations. The memory states can sustain TID level ∼5.2 Mrad (HfO{sub 2}) without significant change in the functionality or the switching characteristics under pulse cycling. However, the stability of the filament is weakened after irradiation as memory states are more vulnerable to flipping under the electrical stress. X-ray photoelectron spectroscopy was performed to ascertain the physical mechanism of the stability degradation, which is attributed to the Hf-O bond breaking by the high-energy γ-ray exposure.
Authors:
;  [1] ;  [2] ; ; ; ; ;  [3]
  1. School of Computing, Informatics, and Decision Systems Engineering, Arizona State University, Tempe, Arizona 85281 (United States)
  2. (United States)
  3. School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States)
Publication Date:
OSTI Identifier:
22269192
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GAMMA RADIATION; HAFNIUM OXIDES; IRRADIATION; TITANIUM HYDRIDES; X-RAY PHOTOELECTRON SPECTROSCOPY