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Title: Modulation of over 10{sup 14} cm{sup −2} electrons in SrTiO{sub 3}/GdTiO{sub 3} heterostructures

We demonstrate charge modulation of over 10{sup 14} cm{sup −2} electrons in a two-dimensional electron gas formed in SrTiO{sub 3}/GdTiO{sub 3} inverted heterostructure field-effect transistors. Increased charge modulation was achieved by reducing the effect of interfacial region capacitances through thick SrTiO{sub 3} cap layers. Transport and device characteristics of the heterostructure field-effect transistors were found to match a long channel field effect transistor model. SrTiO{sub 3} impurity doped metal–semiconductor field effect transistors were also demonstrated with excellent pinch-off and current density exceeding prior reports. The work reported here provides a path towards oxide-based electronics with extreme charge modulation exceeding 10{sup 14} cm{sup −2}.
Authors:
; ;  [1] ; ; ; ;  [2] ;  [1] ;  [3]
  1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
  2. Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)
  3. (United States)
Publication Date:
OSTI Identifier:
22269189
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CAPACITANCE; DOPED MATERIALS; ELECTRONS; FIELD EFFECT TRANSISTORS; GADOLINIUM; MODULATION; STRONTIUM TITANATES