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Title: Optical gain characteristics in Al-rich AlGaN/AlN quantum wells

The optical gain characteristics of Al-rich AlGaN/AlN quantum wells (QWs) were assessed by the variable stripe length method at room temperature. An Al{sub 0.79}Ga{sub 0.21}N/AlN QW with a well width of 5 nm had a large optical gain of 140 cm{sup −1}. Increasing the excitation length induced a redshift due to the gain consumption and the consequent saturation of the amplified spontaneous emission. Moreover, a change in the dominant gain polarization with Al composition, which was attributed to switching of the valence band ordering of strained AlGaN/AlN QWs at Al compositions of ∼0.8, was experimentally demonstrated.
Authors:
; ; ;  [1]
  1. Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510 (Japan)
Publication Date:
OSTI Identifier:
22269186
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; GAIN; QUANTUM WELLS; TEMPERATURE RANGE 0273-0400 K