skip to main content

Title: Room temperature resistive state switching with hysteresis in GdMnO{sub 3} thin film with low threshold voltage

In this paper, we report a room temperature resistive state switching with hysteresis, in a thin film of GdMnO{sub 3} grown on NdGaO{sub 3} substrate. The switched states have a resistance ratio ≈10{sup 3}. The switching is unipolar in nature, with a low set voltage <3 V, while the reset voltage <0.3 V. The switching occurs between a high resistance polaronic insulating state and a low resistance metallic state. The resistance state transition has been ascribed to an electronic mechanism that originates from co-existing phases (created by charge disproportionation) that can undergo a percolative transition enabled by the applied bias.
Authors:
;  [1] ; ; ;  [2]
  1. S. N. Bode National Centre for Basic Sciences, Sector-3, Tank No. 14, JD Block, Kolkata 98, West Bengal (India)
  2. National Science and Technology University, (MISIS), Leninskii prospekt 4, Moscow 119049 (Russian Federation)
Publication Date:
OSTI Identifier:
22269173
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRIC POTENTIAL; HYSTERESIS; OXIDATION; SUBSTRATES; SWITCHES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS