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Title: AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

GaN films were grown on Si (110) substrates using a low-temperature growth technique based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in the GaN films, leading to an increase in the critical thickness for crack formation. In addition, an AlGaN/GaN heterostructure with a flat heterointerface was prepared using this technique. Furthermore, the existence of a two dimensional electron gas at the heterointerface with a mobility of 1360 cm{sup 2}/Vs and a sheet carrier density of 1.3 × 10{sup 13} cm{sup −2} was confirmed. Finally, the use of the AlGaN/GaN heterostructure in a high electron mobility transistor was demonstrated. These results indicate that low-temperature growth via pulsed sputtering is quite promising for the fabrication of GaN-based electronic devices.
Authors:
; ; ; ; ;  [1] ;  [1] ;  [2]
  1. Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan)
  2. (JST), 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075 (Japan)
Publication Date:
OSTI Identifier:
22269167
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRACK PROPAGATION; ELECTRON MOBILITY; GALLIUM NITRIDES; PULSES; SPUTTERING; THICKNESS; TRANSISTORS