skip to main content

Title: Structure and composition of zirconium carbide thin-film grown by ion beam sputtering for optical applications

Thin film of compound material ZrC was deposited on Si (100) wafer using ion beam sputtering method. The deposition was carried out at room temperature and at base pressure of 3×10{sup −5} Pa. X-ray photoelectron spectroscopy (XPS) measurements were performed for determining the surface chemical compositions. Grazing incidence x-ray reflectivity (GIXRR) measurements were performed to study the film thickness, roughness and density. From GIXRR curve roughness value of the film was found less than 1 nm indicating smooth surface morphology. Films density was found 6.51 g/cm{sup 3}, which is close to bulk density. Atomic force microscopy (AFM) measurements were performed to check the surface morphology. AFM investigation showed that the film surface is smooth, which corroborate the GIXRR data. Figure 2 of the original article PDF file, as supplied to AIP Publishing, contained a PDF processing error. This article was updated on 12 May 2014 to correct that error.
Authors:
; ; ;  [1]
  1. X-ray Optics Section, ISU Division, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India)
Publication Date:
OSTI Identifier:
22269164
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1591; Journal Issue: 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMIC FORCE MICROSCOPY; BULK DENSITY; CHEMICAL COMPOSITION; DEPOSITION; DEPOSITS; ION BEAMS; REFLECTIVITY; ROUGHNESS; SPUTTERING; SURFACES; THICKNESS; THIN FILMS; X RADIATION; X-RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIUM CARBIDES