Topological crystalline insulator Pb{sub x}Sn{sub 1-x}Te thin films on SrTiO{sub 3} (001) with tunable Fermi levels
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084 (China)
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China)
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)
In this letter, we report a systematic study of topological crystalline insulator Pb{sub x}Sn{sub 1-x}Te (0 < x < 1) thin films grown by molecular beam epitaxy on SrTiO{sub 3}(001). Two domains of Pb{sub x}Sn{sub 1-x}Te thin films with intersecting angle of α ≈ 45° were confirmed by reflection high energy diffraction, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy (ARPES). ARPES study of Pb{sub x}Sn{sub 1-x}Te thin films demonstrated that the Fermi level of PbTe could be tuned by altering the temperature of substrate whereas SnTe cannot. An M-shaped valance band structure was observed only in SnTe but PbTe is in a topological trivial state with a large gap. In addition, co-evaporation of SnTe and PbTe results in an equivalent variation of Pb concentration as well as the Fermi level of Pb{sub x}Sn{sub 1-x}Te thin films.
- OSTI ID:
- 22269161
- Journal Information:
- APL Materials, Vol. 2, Issue 5; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2166-532X
- Country of Publication:
- United States
- Language:
- English
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