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Title: Sharp semiconductor-to-metal transition of VO{sub 2} thin films on glass substrates

Outstanding phase transition properties of vanadium dioxide (VO{sub 2}) thin films on amorphous glass were achieved and compared with the ones grown on c-cut sapphire and Si (111) substrates, all by pulsed laser deposition. The films on glass substrate exhibit a sharp semiconductor-to-metal transition (∼4.3 °C) at a near bulk transition temperature of ∼68.4 °C with an electrical resistance change as high as 3.2 × 10{sup 3} times. The excellent phase transition properties of the films on glass substrate are correlated with the large grain size and low defects density achieved. The phase transition properties of VO{sub 2} films on c-cut sapphire and Si (111) substrates were found to be limited by the high defect density.
Authors:
;  [1] ;  [2] ;  [1] ;  [3]
  1. Department of Electrical and Computer Engineering, Texas A and M University, College Station, Texas 77843-3128 (United States)
  2. Material Science and Engineering Program, Texas A and M University, College Station, Texas 77843-3128 (United States)
  3. (United States)
Publication Date:
OSTI Identifier:
22267796
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPARATIVE EVALUATIONS; ELECTRIC CONDUCTIVITY; ENERGY BEAM DEPOSITION; GLASS; GRAIN SIZE; LASER RADIATION; METALS; PHASE TRANSFORMATIONS; PULSED IRRADIATION; SAPPHIRE; SEMICONDUCTOR MATERIALS; SUBSTRATES; THIN FILMS; TRANSITION TEMPERATURE; VANADIUM OXIDES