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Title: Effective dopant activation by susceptor-assisted microwave annealing of low energy boron implanted and phosphorus implanted silicon

Rapid processing and reduced end-of-range diffusion result from susceptor-assisted microwave (MW) annealing, making this technique an efficient processing alternative for electrically activating dopants within ion-implanted semiconductors. Sheet resistance and Hall measurements provide evidence of electrical activation. Susceptor-assisted MW annealing, of ion-implanted Si, enables more effective dopant activation and at lower temperatures than required for rapid thermal annealing (RTA). Raman spectroscopy and ion channeling analyses are used to monitor the extent of ion implantation damage and recrystallization. The presence and behavior of extended defects are monitored by cross-section transmission electron microscopy. Phosphorus implanted Si samples experience effective electrical activation upon MW annealing. On the other hand, when boron implanted Si is MW annealed, the growth of extended defects results in reduced crystalline quality that hinders the electrical activation process. Further comparison of dopant diffusion resulting from MW annealing and rapid thermal annealing is performed using secondary ion mass spectroscopy. MW annealed ion implanted samples show less end-of-range diffusion when compared to RTA samples. In particular, MW annealed P{sup +} implanted samples achieve no visible diffusion and equivalent electrical activation at a lower temperature and with a shorter time-duration of annealing compared to RTA. In this study, the peak temperature attained duringmore » annealing does not depend on the dopant species or dose, for susceptor-assisted MW annealing of ion-implanted Si.« less
Authors:
; ;  [1] ;  [2] ; ;  [3] ;  [4]
  1. School of Matter, Transport, and Energy, Arizona State University, Tempe, Arizona 85287 (United States)
  2. CHD-Fab, Freescale Semiconductor Inc., 1300 N. Alma School Rd., Chandler, Arizona 85224 (United States)
  3. Department of Electrical Engineering, University of California, San Diego, California 92093 (United States)
  4. Department of Mathematics, Norfolk State University, Norfolk, Virginia 23504 (United States)
Publication Date:
OSTI Identifier:
22267772
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; BORON; CHANNELING; CROSS SECTIONS; DOPED MATERIALS; HIGH ROOMS; ION IMPLANTATION; ION MICROPROBE ANALYSIS; MASS SPECTROSCOPY; MICROWAVE RADIATION; PHOSPHORUS; PHOSPHORUS IONS; RAMAN SPECTROSCOPY; RECRYSTALLIZATION; SEMICONDUCTOR MATERIALS; SILICON; TRANSMISSION ELECTRON MICROSCOPY