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Title: Effects of emission layer doping on the spatial distribution of charge and host recombination rate density in organic light emitting devices: A numerical study

Based on drift-diffusion theory, a numerical model of the doping of a single energy level trap in the emission layer of an organic light emitting device (OLED) was developed, and the effects of doping of this single energy level trap on the distribution of the charge density, the recombination rate density, and the electric field in single- and double-layer OLEDs were studied numerically. The results show that by doping the n-type (p-type) emission layer with single energy electron (hole) traps, the distribution of the recombination rate density can be tuned and shifted, which is useful for improvement of the device performance by reduced electrode quenching or for realization of desirable special functions, e.g., emission spectrum tuning in multiple dye-doped white OLEDs.
Authors:
; ; ;  [1] ;  [1] ;  [2]
  1. Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22267771
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHARGE DENSITY; DOPED MATERIALS; ELECTRIC FIELDS; EMISSION; EMISSION SPECTRA; ENERGY LEVELS; LAYERS; LIGHT EMITTING DIODES; NUMERICAL ANALYSIS; RECOMBINATION; SPATIAL DISTRIBUTION; TRAPS