skip to main content

SciTech ConnectSciTech Connect

Title: Investigation of hole injection enhancement by MoO{sub 3} buffer layer in organic light emitting diodes

An MoO{sub 3} buffer layer prepared by thermal evaporation as hole injection layer was investigated in organic light emitting diodes. The MoO{sub 3} film inserted between the anode and hole transport layer decreased the operating voltage and enhanced power efficiency. Introduction of 1 nm MoO{sub 3} film, which was found to be the optimum layer thickness, resulted in 45% increase in efficiency compared with traditional ITO anode. Results from atomic force microscopy and photoemission spectroscopy showed that smooth surface morphology and suitable energy level alignment of ITO/MoO{sub 3} interface facilitated hole injection and transport. The hole injection and transport mechanism at the ITO/MoO{sub 3} interface in thin and thick buffer layers were analyzed.
Authors:
;  [1]
  1. State Key Lab of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275 (China)
Publication Date:
OSTI Identifier:
22267769
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALIGNMENT; ANODES; ATOMIC FORCE MICROSCOPY; BUFFERS; ELECTRIC POTENTIAL; ENERGY LEVELS; HOLES; INJECTION; LAYERS; LIGHT EMITTING DIODES; MOLYBDENUM OXIDES; MORPHOLOGY; PHOTOEMISSION; SPECTROSCOPY; THICKNESS