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Title: Effect of annealing on SiO{sub x}-TiO{sub 2} axial heterostructure nanowires and improved photodetection

Glancing angle deposition technique has been used to synthesize the axial heterostructure SiO{sub x}-TiO{sub 2} nanowires (NWs) on the Si substrate. The field emission gun scanning electron microscope image shows the formation of perpendicular NWs on Si substrate. A typical transmission electron microscope image confirms the heterostructure NW which consists of SiO{sub x} of length ∼130 nm and TiO{sub 2} of length ∼170 nm. The amorphous NWs transformed to polycrystalline nature after annealing. The trap assisted radiative recombination process is absent for the annealed NWs. An averagely 1.1 fold enhanced photoabsorption was exhibited by the annealed NWs in the 200–350 nm region and 1.5 fold in the 500–850 nm region. The leakage current (2.6 × 10{sup −8} A/cm{sup 2} at −0.5 V) significantly reduced for annealed NWs device. A maximum 1.4 × 10{sup 3} times enlarged photodetection has been observed for annealed device.
Authors:
;  [1] ; ;  [2] ;  [3] ;  [4]
  1. Department of Electronics and Communication Engineering, National Institute of Technology Nagaland, Dimapur, Nagaland 797103 (India)
  2. Department of Electronics and Communication Engineering, National Institute of Technology Agartala, Jirania, Tripura (West) 799055 (India)
  3. Department of Radio Physics and Electronics, University of Calcutta, Kolkata 700009 (India)
  4. Department of Physics, Jadavpur University, Kolkata 700032 (India)
Publication Date:
OSTI Identifier:
22267767
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; FIELD EMISSION; IMAGES; LEAKAGE CURRENT; POLYCRYSTALS; QUANTUM WIRES; SCANNING ELECTRON MICROSCOPY; SILICON OXIDES; SUBSTRATES; TITANIUM OXIDES; TRANSMISSION ELECTRON MICROSCOPY; WIRES