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Title: Study on the nitrogen-doped W-Sb-Te material for phase change memory application

N doping is proposed to enlarge sensing margin of W{sub 0.08}(Sb{sub 2}Te){sub 0.92} based high-temperature phase-change memories (PCMs). The sensing margin is increased from 30 to 5 × 10{sup 3}, with an increase from 145 °C to 158 °C in data retention. The grain size is reduced to 10 nm. The PCM based on N-W{sub 0.08}(Sb{sub 2}Te){sub 0.92} shows the fast operation speed of 30 ns and good cycling ability of >10{sup 3}. By X-ray photoelectron spectroscopy and ab initio calculation, the W atoms are suggested to locate in the Sb positions and interstices of the lattice. The W atoms in interstice will bond to N atoms during N doping.
Authors:
; ; ;  [1] ;  [2] ; ; ; ; ;  [1]
  1. State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22267752
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMS; DOPED MATERIALS; GRAIN SIZE; NITROGEN; TEMPERATURE RANGE 0400-1000 K; X-RAY PHOTOELECTRON SPECTROSCOPY