skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: SiN-SiC nanofilm: A nano-functional ceramic with bipolar magnetic semiconducting character

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4874335· OSTI ID:22267749
;  [1];  [1]
  1. Hefei National Laboratory for Physical Science at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China)

Nowadays, functional ceramics have been largely explored for application in various fields. However, magnetic functional ceramics for spintronics remain little studied. Here, we propose a nano-functional ceramic of sphalerite SiN-SiC nanofilm with intrinsic ferromagnetic order. Based on first principles calculations, the SiN-SiC nanofilm is found to be a ferromagnetic semiconductor with an indirect band gap of 1.71 eV. By mean field theory, the Curie temperature is estimated to be 304 K, close to room temperature. Furthermore, the valence band and conduction band states of the nanofilm exhibit inverse spin-polarization around the Fermi level. Thus, the SiN-SiC nanofilm is a typical bipolar magnetic semiconductor in which completely spin-polarized currents with reversible spin polarization can be created and controlled by applying a gate voltage. Such a nano-functional ceramic provides a possible route for electrical manipulation of carrier's spin orientation.

OSTI ID:
22267749
Journal Information:
Applied Physics Letters, Vol. 104, Issue 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English

Similar Records

Theoretical Design of Robust Ferromagnetism and Bipolar Semiconductivity in Graphene-Based Nanoroads
Journal Article · Thu Oct 12 00:00:00 EDT 2017 · Journal of Physical Chemistry. C · OSTI ID:22267749

Bipolar Magnetic Materials Based on 2D Ni[TCNE] Metal–Organic Coordination Networks
Journal Article · Wed Dec 27 00:00:00 EST 2017 · Advanced Electronic Materials · OSTI ID:22267749

Oxide Ferromagnetic Semiconductors for Spin-Electronic Transprt
Technical Report · Mon Nov 24 00:00:00 EST 2008 · OSTI ID:22267749