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Title: Carrier dynamics in Beryllium doped low-temperature-grown InGaAs/InAlAs

The electron and hole dynamics in low-temperature-grown InGaAs/InAlAs multiple quantum well structures are studied by optical pump-probe transmission measurements for Beryllium (Be) doping levels between 3 × 10{sup 17} cm{sup −3} and 4 × 10{sup 18} cm{sup −3}. We investigate electron dynamics in the limit cases of unsaturated and completely saturated electron trapping. By expanding a rate equation model in these limits, the details of carrier dynamics are revealed. Electrons are trapped by ionized arsenic antisites, whereas recombination occurs between trapped electrons and holes trapped by negatively charged Be dopants.
Authors:
; ; ; ;  [1]
  1. Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute, Einsteinufer 37, 10587 Berlin (Germany)
Publication Date:
OSTI Identifier:
22267746
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ARSENIC; BERYLLIUM; DOPED MATERIALS; GALLIUM ARSENIDES; HOLES; INDIUM ARSENIDES; QUANTUM WELLS; RECOMBINATION; TRAPPED ELECTRONS