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Title: Disentangling phonon and impurity interactions in δ-doped Si(001)

We present a study of the phonon and impurity interactions in a shallow two dimensional electron gas formed in Si(001). A highly conductive ultra-narrow n-type dopant δ-layer, which serves as a platform for quantum computation architecture, is formed and studied by angle resolved photoemission spectroscopy (ARPES) and temperature dependent nanoscale 4-point probe (4PP). The bandstructure of the δ-layer state is both measured and simulated. At 100 K, good agreement is only achieved by including interactions; electron-impurity scattering (W{sub 0} = 56 to 61 meV); and electron-phonon coupling (λ = 0.14 ± 0.04). These results are shown to be consistent with temperature dependent 4PP resistance measurements which indicate that at 100 K, ≈7∕8 of the measured resistance is due to impurity scattering with the remaining 1/8 coming from phonon interactions. In both resistance and bandstructure measurements, the impurity contribution exhibits a variability of ≈9% for nominally identical samples. The combination of ARPES and 4PP affords a thorough insight into the relevant contributions to electrical resistance in reduced dimensionality electronic platforms.
Authors:
;  [1] ;  [2] ;  [3] ;  [4] ;  [5]
  1. Department of Physics, Norwegian University of Science and Technology (NTNU), N-7491 Trondheim (Norway)
  2. MAX IV Laboratory, Lund University, 221 00 Lund (Sweden)
  3. (Australia)
  4. Department of Physics and Astronomy, Interdisciplinary Nanoscience Center (iNANO), University of Aarhus, 8000 Aarhus C (Denmark)
  5. School of Physics, Centre of Excellence for Quantum Computation and Communication Technology, University of New South Wales, Sydney, NSW 2052 (Australia)
Publication Date:
OSTI Identifier:
22267715
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRON-PHONON COUPLING; IMPURITIES; PHONONS; PHOTOEMISSION; SCATTERING; TEMPERATURE DEPENDENCE