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Title: Percolation of gallium dominates the electrical resistance of focused ion beam deposited metals

Metal deposition through focused ion beam (FIB) based systems is thought to result in material composed of the primary metal from the metallo-organic precursor in addition to carbon, oxygen, and gallium. We determined, through electrical resistance and chemical composition measurements on a wide range of FIB deposited platinum and tungsten lines, that the gallium ion (Ga{sup +}) concentration in the metal lines plays the dominant role in controlling the electrical resistivity. Effective medium theory, based on McLachlan's formalisms, was used to describe the relationship between the Ga{sup +} concentration and the corresponding resistivity.
Authors:
 [1] ;  [2] ;  [3]
  1. Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)
  2. Qualcomm Technologies Incorporated, San Diego, California 92121 (United States)
  3. Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, California 92093 (United States)
Publication Date:
OSTI Identifier:
22267714
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DEPOSITS; ELECTRIC CONDUCTIVITY; GALLIUM; GALLIUM IONS; ION BEAMS; PLATINUM; TUNGSTEN