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Title: Polarity-inverted ScAlN film growth by ion beam irradiation and application to overtone acoustic wave (000-1)/(0001) film resonators

Polarity inversion in wurtzite film is generally achieved by the epitaxial growth on a specific under-layer. We demonstrate polarity inversion of c-axis oriented ScAlN films by substrate ion beam irradiation without using buffer layer. Substrate ion beam irradiation was induced by either sputtering a small amount of oxide (as a negative ion source) onto the cathode or by applying a RF bias to the substrate. Polarity of the films was determined by a press test and nonlinear dielectric measurement. Second overtone thickness extensional mode acoustic resonance and suppression of fundamental mode resonance, indicating complete polarity inversion, were clearly observed in bilayer highly oriented (000-1)/(0001) ScAlN film.
Authors:
;  [1] ;  [2]
  1. Graduate School of Engineering, Nagoya Institute of Technology, Nagoya 466-8555 (Japan)
  2. Kumamoto National College of Technology, Kumamoto 861-1102 (Japan)
Publication Date:
OSTI Identifier:
22267713
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 17; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; DIELECTRIC MATERIALS; EPITAXY; ION BEAMS; NONLINEAR PROBLEMS; OXIDES; RESONATORS; SOUND WAVES; SPUTTERING; SUBSTRATES; THIN FILMS