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Title: Reliable reduction of Fermi-level pinning at atomically matched metal/Ge interfaces by sulfur treatment

This study demonstrates that by using a sulfur (S) treatment on the Ge surface, a reduction in Fermi level pinning can reproducibly be achieved at atomically matched metal/Ge(111) interfaces. The Schottky barrier height for p-type Ge can be controlled by changing the metal work function despite the metal/Ge junctions. The results indicate that the combination of atomic-arrangement matching and S treatment can remove extrinsic factors influencing Fermi level pinning at metal/Ge interfaces.
Authors:
; ;  [1] ; ; ;  [2] ;  [1] ;  [3]
  1. Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)
  2. Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082 (Japan)
  3. (Japan)
Publication Date:
OSTI Identifier:
22267709
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; FERMI LEVEL; METALS; SCHOTTKY BARRIER DIODES; SULFUR; WORK FUNCTIONS