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Title: Effect of argon gas flow rate on properties of film electrodes prepared by thermal vacuum evaporation from synthesized Cu{sub 2}SnSe{sub 3} source

This work describes a new technique to enhance photoresponse of metal chalcogenide-based semiconductor film electrodes deposited by thermal vacuum evaporation under argon gas flow from synthesized Cu{sub 2}SnSe{sub 3} sources. SnSe formation with Cu-doped was obtained under higher argon gas flow rate (V{sub A} = 25 cm{sup 3}/min). Higher value of photoresponse was observed for films deposited under V{sub A} = 25 cm{sup 3}/min which was 9.1%. This finding indicates that Cu atoms inside the SnSe film were important to increase carrier concentrations that promote higher photoresponse.
Authors:
; ;  [1] ;  [2] ;  [3] ;  [4]
  1. Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 UPM Serdang (Malaysia)
  2. Department of Chemistry, Faculty of Science, Universiti Putra Malaysia, 43400 UPM Serdang (Malaysia)
  3. SSERL, Department of Chemistry An-Najah N. University, PO Box 7, Nablus, West Bank (Country Unknown)
  4. Department of Molecular Science, School of Medicine, Shimane University, Izumo, Shimane, 693-8501 (Japan)
Publication Date:
OSTI Identifier:
22266180
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1588; Journal Issue: 1; Conference: 4. international meeting on frontiers in physics, Kuala Lumpur (Malaysia), 27-30 Aug 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ARGON; DEPOSITS; DOPED MATERIALS; ELECTRODES; FILMS; GAS FLOW; SEMICONDUCTOR MATERIALS; TIN SELENIDES; VACUUM EVAPORATION