Effect of argon gas flow rate on properties of film electrodes prepared by thermal vacuum evaporation from synthesized Cu{sub 2}SnSe{sub 3} source

Journal Article · Wed Mar 05 00:00:00 EST 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4866957· OSTI ID:22266180

Sabli, Nordin; Talib, Zainal Abidin; Yunus, Wan Mahmood Mat ^[1]; Zainal, Zulkarnain ^[2]; Hilal, Hikmat S. ^[3]; Fujii, Masatoshi ^[4]

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1. Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 UPM Serdang (Malaysia)
2. Department of Chemistry, Faculty of Science, Universiti Putra Malaysia, 43400 UPM Serdang (Malaysia)
3. SSERL, Department of Chemistry An-Najah N. University, PO Box 7, Nablus, West Bank (Country Unknown)
4. Department of Molecular Science, School of Medicine, Shimane University, Izumo, Shimane, 693-8501 (Japan)

This work describes a new technique to enhance photoresponse of metal chalcogenide-based semiconductor film electrodes deposited by thermal vacuum evaporation under argon gas flow from synthesized Cu{sub 2}SnSe{sub 3} sources. SnSe formation with Cu-doped was obtained under higher argon gas flow rate (V{sub A} = 25 cm{sup 3}/min). Higher value of photoresponse was observed for films deposited under V{sub A} = 25 cm{sup 3}/min which was 9.1%. This finding indicates that Cu atoms inside the SnSe film were important to increase carrier concentrations that promote higher photoresponse.

• OSTI ID: 22266180
• Journal Information: AIP Conference Proceedings, Vol. 1588, Issue 1; Conference: 4. international meeting on frontiers in physics, Kuala Lumpur (Malaysia), 27-30 Aug 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARGON
DEPOSITS
DOPED MATERIALS
ELECTRODES
FILMS
GAS FLOW
SEMICONDUCTOR MATERIALS
TIN SELENIDES
VACUUM EVAPORATION