skip to main content

SciTech ConnectSciTech Connect

Title: Modelling of silicon oxynitridation by nitrous oxide using the reaction rate approach

Large technological progress in oxynitridation processing leads to the introduction of silicon oxynitride as ultra-thin gate oxide. On the theoretical side, few studies have been dedicated to the process modelling of oxynitridation. Such an objective is a considerable challenge regarding the various atomistic mechanisms occurring during this fabrication step. In this article, some progress performed to adapt the reaction rate approach for the modelling of oxynitride growth by a nitrous ambient are reported. The Ellis and Buhrman's approach is used for the gas phase decomposition modelling. Taking into account the mass balance of the species at the interface between the oxynitride and silicon, a minimal kinetic model describing the oxide growth has been calibrated and implemented. The influence of nitrogen on the reaction rate has been introduced in an empirical way. The oxidation kinetics predicted with this minimal model compares well with several experiments.
Authors:
 [1]
  1. Départment ISEN, IEMN-UMR-8520, 41 Boulevard Vauban, 59046 Lille Cedex (France)
Publication Date:
OSTI Identifier:
22266178
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DECOMPOSITION; FABRICATION; MASS BALANCE; NITROGEN; NITROUS OXIDE; OXIDATION; REACTION KINETICS; SILICON; SIMULATION