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Title: Effect of reduction of trap charge carrier density in organic field effect transistors by surface treatment of dielectric layer

In this work, we have studied the effect of surface treatment of SiO{sub 2} dielectric layer on the reduction of the trap charge carrier density at dielectric/semiconducting interface by fabricating a metal–insulator–semiconductor (MIS) device using α, ω-dihexylcarbonylquaterthiophene as semiconducting layer. SiO{sub 2} dielectric layer has been treated with 1,1,1,3,3,3-hexamethyldisilazane (HMDS) to modify the chemical group acting as charge traps. Capacitance-voltage measurements have been performed on MIS devices fabricated on SiO{sub 2} and HMDS treated SiO{sub 2}. These data have been used for the calculation of trap charge carrier density and Debye length at the dielectric-semiconductor interface. The calculated trap charge carrier density has been found to reduce from (2.925 ± 0.049) × 10{sup 16} cm{sup −3} to (2.025 ± 0.061) × 10{sup 16} cm{sup −3} for the MIS device with HMDS treated SiO{sub 2} dielectric in comparison to that of untreated SiO{sub 2}. Next, the effect of reduction in trap charge carrier density has been studied on the performance of organic field effect transistors. The improvement in the device parameters like mobility, on/off ratio, and gate leakage current has been obtained with the effect of the surface treatment. The charge carrier mobility has been improved by a factor of 2 through this treatment. Further, the influence of the treatment wasmore » observed by atomic force microscope and Fourier transform infrared spectroscopy techniques.« less
Authors:
; ; ; ;  [1] ;  [1] ;  [2]
  1. Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, CSIR-Network of Institute for Solar Energy (NISE), Dr. K.S.Krishnan Road, New Delhi 110012 (India)
  2. (India)
Publication Date:
OSTI Identifier:
22266168
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMIC FORCE MICROSCOPY; CAPACITANCE; CHARGE CARRIERS; COMPARATIVE EVALUATIONS; DEBYE LENGTH; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; FOURIER TRANSFORM SPECTROMETERS; INTERFACES; LEAKAGE CURRENT; REDUCTION; SEMICONDUCTOR MATERIALS; SILICA; SILICON OXIDES; SURFACE TREATMENTS; TRAPS