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Title: Phonon-limited low-field mobility in silicon: Quantum transport vs. linearized Boltzmann Transport Equation

We propose to check and validate the approximations made in dissipative quantum transport (QT) simulations solved in the Non-equilibrium Green's Function formalism by comparing them with the exact solution of the linearized Boltzmann Transport Equation (LB) in the stationary regime. For that purpose, we calculate the phonon-limited electron and hole mobility in bulk Si and ultra-scaled Si nanowires for different crystal orientations 〈100〉, 〈110〉, and 〈111〉. In both QT and LB simulations, we use the same sp{sup 3}d{sup 5}s{sup *} tight-binding model to describe the electron/hole properties and the same valence-force-field approach to account for the phonon properties. It is found that the QT simplifications work well for electrons, but are less accurate for holes, where a renormalization of the phonon scattering strength is proved useful to improve the results.
Authors:
;  [1]
  1. Integrated Systems Laboratory, ETH Zürich, Gloriastr. 35, 8092 Zürich (Switzerland)
Publication Date:
OSTI Identifier:
22266159
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; APPROXIMATIONS; BOLTZMANN EQUATION; ELECTRONS; EXACT SOLUTIONS; GREEN FUNCTION; HOLE MOBILITY; HOLES; PHONONS; QUANTUM WIRES; RENORMALIZATION; SCATTERING; SILICON; SIMULATION