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Title: Mn concentration dependent structural and optical properties of a-plane Zn{sub 0.99-x}Mn{sub x}Na{sub 0.01}O

Non-polar a-plane (112{sup ¯}0) Zn{sub 0.99−x}Mn{sub x}Na{sub 0.01}O (x = 0, 0.02, 0.03, 0.04, and 0.05) thin films have been prepared on r-plane (112{sup ¯}0) sapphire substrates by pulsed laser deposition (PLD). The influences of Mn content on the structural and optical properties of the films have been studied. It is indicated that moderate Mn doping facilitates the non-polar growth of ZnO, and all the doped films are single phase with a hexagonal wurtzite structure. The transmittance spectra suggested that all films are transparent in the visible region exhibiting a transmittance above 80%. Mn{sup 2+} doped Zn{sub 0.99}Na{sub 0.01}O shows an initial decrease of optical band gap (OBG) for small concentration of Mn, followed by a monotonic increase. The anomalous decrease in OBG for low concentrations of Mn is attributed to the strong exchange interaction present between the sp electrons of the host matrix and d electrons of Mn. Emission studies were also performed showing suppressed blue-shifted ultraviolet band and dominant violet-blue bands, which might originate from the zinc vacancy (V{sub Zn}) and zinc interstitial (Zn{sub i}) defects. The intensity of defect-related emission peaks is Mn doping-level-dependent as well and the results coincide well with that from the structural analyses.
Authors:
; ; ; ; ; ;  [1]
  1. State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)
Publication Date:
OSTI Identifier:
22266149
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABUNDANCE; CONCENTRATION RATIO; DOPED MATERIALS; ELECTRONS; ENERGY BEAM DEPOSITION; EXCHANGE INTERACTIONS; LASER RADIATION; MANGANESE IONS; OPTICAL PROPERTIES; PULSED IRRADIATION; SAPPHIRE; THIN FILMS; ULTRAVIOLET RADIATION; VACANCIES; ZINC; ZINC OXIDES