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Title: Effect of arsenic on the optical properties of GaSb-based type II quantum wells with quaternary GaInAsSb layers

Optical properties of molecular beam epitaxially grown type II “W” shaped GaSb/AlSb/InAs/GaIn(As)Sb/InAs/AlSb/GaSb quantum wells (QWs) designed for the active region of interband cascade lasers have been investigated. Temperature dependence of Fourier-transformed photoluminescence and photoreflectance was employed to probe the effects of addition of arsenic into the original ternary valence band well of GaInSb. It is revealed that adding arsenic provides an additional degree of freedom in terms of band alignment and strain tailoring and allows enhancing the oscillator strength of the active type II transition. On the other hand, however, arsenic incorporation apparently also affects the structural and optical material quality via generating carrier trapping states at the interfaces, which can deteriorate the radiative efficiency. These have been evidenced in several spectroscopic features and are also confirmed by cross-sectional transmission electron microscopy images. While arsenic incorporation into type II QWs is a powerful heterostructure engineering tool for optoelectronic devices, a compromise has to be found between ideal band structure properties and high quality morphological properties.
Authors:
; ; ; ; ;  [1] ; ; ;  [2] ;  [3]
  1. Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, Wrocław (Poland)
  2. Technische Physik, University of Würzburg and Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems, Am Hubland, D-97074 Würzburg (Germany)
  3. Laboratoire de Photonique et de Nanostructures, CNRS, Route de Nozay, 91460 Marcoussus (France)
Publication Date:
OSTI Identifier:
22266140
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ARSENIC; FOURIER TRANSFORMATION; GAIN; GALLIUM ANTIMONIDES; INDIUM ARSENIDES; OPTICAL PROPERTIES; OSCILLATOR STRENGTHS; PHOTOLUMINESCENCE; QUANTUM WELLS; TEMPERATURE DEPENDENCE; TRANSMISSION ELECTRON MICROSCOPY