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Title: Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates

The multiexciton properties of extrinsic centers from AlGaAs layers on Ge and Si substrates are addressed. The two photon cascade is found both in steady state and in time resolved experiments. Polarization analysis of the photoluminescence provides clearcut attribution to neutral biexciton complexes. Our findings demonstrate the prospect of exploiting extrinsic centers for generating entangled photon pairs on a Si based device.
Authors:
; ; ; ; ;  [1] ; ;  [2] ;  [3]
  1. Dipartimento di Fisica e Astronomia, LENS and CNISM, Università di Firenze, Via Sansone 1, I-50019 Firenze (Italy)
  2. Dipartimento di Scienza dei Materiali and L-NESS, Università di Milano Bicocca, Via Cozzi 53, I-20125 Milano (Italy)
  3. Dipartimento di Fisica and L-NESS, Politecnico di Milano, Via Anzani 42, 22100 Como (Italy)
Publication Date:
OSTI Identifier:
22266138
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM ARSENIDES; GALLIUM ARSENIDES; PHOTOLUMINESCENCE; PHOTONS; QUANTUM ENTANGLEMENT; STEADY-STATE CONDITIONS; SUBSTRATES; TIME RESOLUTION