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Title: Atomic scale investigations of the gate controlled tunneling effect in graphyne nanoribbon

Configuration and transport properties of zigzag graphyne nanoribbon (nā€‰=ā€‰2) are investigated by means of the first-principles calculations and non-equilibrium Green's function in this work. We demonstrated the controllability of the graphyne's conductivity by gate bias, and the tunneling behavior induced by gate and drain voltages was investigated systemically. The characteristics of I{sub d}-V{sub d}, I{sub d}-V{sub g}, as well as the evolutions of current with electron temperature elevation were explored. The device exhibits a tunneling ratio around 10{sup 3}, and the state art of tunneling operations of the tunneling field effect transistor in this split-new material was achieved.
Authors:
; ; ; ; ; ;  [1]
  1. State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433 (China)
Publication Date:
OSTI Identifier:
22266137
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 77 NANOSCIENCE AND NANOTECHNOLOGY; ELECTRIC POTENTIAL; ELECTRON TEMPERATURE; FIELD EFFECT TRANSISTORS; GREEN FUNCTION; NANOSTRUCTURES; TUNNEL EFFECT