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Title: Mechanism of power consumption inhibitive multi-layer Zn:SiO{sub 2}/SiO{sub 2} structure resistance random access memory

In this paper, multi-layer Zn:SiO{sub 2}/SiO{sub 2} structure is introduced to reduce the operation power consumption of resistive random access memory (RRAM) device by modifying the filament formation process. And the configuration of multi-layer Zn:SiO{sub 2}/SiO{sub 2} structure is confirmed and demonstrated by auger electron spectrum. Material analysis together with conduction current fitting is applied to qualitatively evaluate the carrier conduction mechanism on both low resistance state and high resistance state. Finally, single layer and multilayer conduction models are proposed, respectively, to clarify the corresponding conduction characteristics of two types of RRAM devices.
Authors:
;  [1] ; ; ; ; ; ;  [2] ;  [3] ;  [4] ;  [5] ; ;  [6] ;  [7] ; ;  [3] ;  [8]
  1. School of Software and Microelectronics, Peking University, Beijing 100871 (China)
  2. Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China)
  3. Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China)
  4. (China)
  5. Department of Electronics Engineering and Computer Science, Tung-Fang Design Institute, Kaohsiung, Taiwan (China)
  6. Department of Mechanical and Electro-Mechanical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan (China)
  7. Department of Chemistry, National Kaohsiung Normal University, Kaohsiung, Taiwan (China)
  8. Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China)
Publication Date:
OSTI Identifier:
22266132
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 23; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIERS; ELECTRON SPECTRA; FILAMENTS; LAYERS; OPERATION; RANDOMNESS