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Title: Anisotropic strain relaxation and the resulting degree of polarization by one- and two-step growth in nonpolar a-plane GaN grown on r-sapphire substrate

Anisotropic strain relaxation and the resulting degree of polarization of the electronic transition in nonpolar a-plane GaN using one- and two-step growth are studied. By using two-step growth, a slower coalescence and a longer roughening-recovery process lead to larger anisotropic strain relaxation, a less striated surface, and lower densities of basal stacking fault (BSF) and prismatic stacking fault (PSF). It is suggested that anisotropic in-plane strains, surface striation, and BSF and PSF densities in nonpolar a-GaN are consequences of the rate of coalescence, the period of roughening-recovery process, and the degree of anisotropic strain relaxation. In addition, the two-step growth mode can enhance the degree of polarization of the electronic transition. The simulation results of the k⋅p perturbation approach show that the oscillator strength and degree of polarization of the electronic transition strongly depend on the in-plane strains upon anisotropic in-plane strain relaxation. The research results provide important information for optimized growth of nonpolar III-nitrides. By using two-step growth and by fabricating the devices on the high-quality nonpolar free-standing GaN substrates, high-efficiency nonpolar a-plane InGaN LEDs can be realized. Nonpolar a-plane InGaN/GaN LEDs can exhibit a strongly polarized light to improve the contrast, glare, eye discomfort and eye strain, andmore » efficiency in display application.« less
Authors:
;  [1] ;  [2] ;  [3] ;  [4]
  1. Department of Applied Physics, National University of Kaohsiung No.700, Kaohsiung University Road, Nan-Tzu Dist., 811. Kaohsiung, Taiwan (China)
  2. Department of Electronic Engineering, Ming Chuan University, Taoyuan, Taiwan (China)
  3. Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan (China)
  4. Department of Electrical Engineering, Yale University, New Haven 06520, Connecticut (United States)
Publication Date:
OSTI Identifier:
22266117
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 23; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANISOTROPY; GALLIUM NITRIDES; MATERIALS RECOVERY; OSCILLATOR STRENGTHS; PERTURBATION THEORY; POLARIZATION; RELAXATION; SAPPHIRE; STACKING FAULTS; STRAINS; SUBSTRATES