skip to main content

Title: High precision laser induced etching of multilayered MoS{sub 2}

We demonstrate a method for reducing the thickness of multilayered MoS{sub 2} to few and single layers by irradiation with a 532 nm wavelength laser spot. The morphology and optical properites of the etched MoS{sub 2} were were measured by atomic force microscopy (AFM) and Raman spectroscopy before and after laser etching. Our laser etching method is a simple and highly effective tool for the fabrication of single, and few layered MoS{sub 2} for atomic scale optical and electronic device applications.
Authors:
;  [1] ; ; ;  [2] ;  [3]
  1. Electronics-Inspired Interdisciplinary Research Institute, Toyohashi University of Technology, Toyohashi, Aichi 441-8580 (Japan)
  2. Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku, Toyohashi, Aichi, 441-8580 (Japan)
  3. Electronics-Inspired Interdisciplinary Research Institute, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan and Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka (Japan)
Publication Date:
OSTI Identifier:
22266054
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1585; Journal Issue: 1; Conference: IRAGO conference 2013, Aichi (Japan), 24-25 Oct 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; ACCURACY; ATOMIC FORCE MICROSCOPY; ELECTRONIC EQUIPMENT; ETCHING; FABRICATION; IRRADIATION; LASERS; LAYERS; MOLYBDENUM SULFIDES; RAMAN SPECTROSCOPY; WAVELENGTHS