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Title: Time dependence of carbon film deposition on SnO{sub 2}/Si using DC unbalanced magnetron sputtering

Carbon deposition on SnO{sub 2} layer has been demonstrated at low temperature using DC unbalanced magnetron-sputtering technique for various time depositions. Before carbon sputtering process, SnO{sub 2} thin layer is grown on silicon substrate by thermal evaporation method using high purity Sn wire and then fully oxidizes by dry O{sub 2} at 225°C. Carbon sputtering process was carried out at pressure of 4.6×10{sup −2} Torr by keeping the substrate temperature of 300 °C for sputtering deposition time of 1 to 4 hours. The properties of SnO{sub 2}/Si structure and carbon thin film on SnO{sub 2} is characterized using SEM, EDAX, XRD, FTIR, and Raman Spectra. SEM images and XRD spectra show that SnO2 thin film has uniformly growth on Si substrate and affected by annealing temperature. Raman and FTIR results confirm the formation of carbon-rich thin film on SnO{sub 2}. In addition, XRD spectra indicate that some structural change occur by increasing sputtering deposition time. Furthermore, the change of atomic structure due to the thermal annealing is analized by XRD spectra and Raman spectroscopy.
Authors:
; ;  [1]
  1. Quantum Semiconductor and Devices Lab., Dept. of Physics, Institut Teknologi Bandung, Ganesa 10 Bandung 40132 (Indonesia)
Publication Date:
OSTI Identifier:
22266040
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1586; Journal Issue: 1; Conference: NNS2013: 5. nanoscience and nanotechnology symposium, Surabaya (Indonesia), 23-25 Oct 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; ANNEALING; CARBON; DEPOSITION; FOURIER TRANSFORMATION; INFRARED SPECTRA; MAGNETRONS; RAMAN SPECTRA; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SPUTTERING; SUBSTRATES; THIN FILMS; TIME DEPENDENCE; TIN OXIDES; X-RAY DIFFRACTION