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Title: Spectroscopy analysis of graphene like deposition using DC unbalanced magnetron sputtering on γ‐Al{sub 2}O{sub 3} buffer layer

Abstract

In this work, graphene-like deposition using DC unbalanced magnetron-sputtering technique on γ‐Al{sub 2}O{sub 3} layer at low temperature has been systematically studied. The γ‐Al{sub 2}O{sub 3} was growth on silicon substrate using thermal evaporation of Al wire and continuing with dry oxidation of Al at 550 °C. Sputtering process were carried out using Fe-doped carbon pellet as a target by maintain the chamber pressure of 4.6×10{sup −2} Torr at substrate temperature of 300 °C for time deposition range of 1 to 4 hours. The quality of Al{sub 2}O{sub 3} on Si(100) and the characteristic of carbon thin film on γ‐Al{sub 2}O{sub 3} were analized by mean XRD, opctical microscopy, EDAX, FTIR, and Raman spectra. XRD and optical microscopy analysis shows that Al{sub 2}O{sub 3} film is growth uniformly on Si substrate and forming the γ phase of Al{sub 2}O{sub 3}. Raman and FTIR spectra confirm the formation of graphene like carbon layer on Al{sub 2}O{sub 3}. Additionally, thermal annealing for some sample series have been performed to study their structural stability. The change of atomic structure due to thermal annealing were analized by XRD spectra. The quality and the number of graphene layers are investigated by using Raman spectra peaksmore » analysis.« less

Authors:
;  [1]
  1. Quantum Semiconductor and Devices Lab., Dept. of Physics, Institut Teknologi Bandung, Ganesa 10 Bandung, 40132 (Indonesia)
Publication Date:
OSTI Identifier:
22266026
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1586; Journal Issue: 1; Conference: NNS2013: 5. nanoscience and nanotechnology symposium, Surabaya (Indonesia), 23-25 Oct 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM OXIDES; ANNEALING; DEPOSITION; DOPED MATERIALS; FOURIER TRANSFORMATION; GRAPHENE; INFRARED SPECTRA; LAYERS; MAGNETRONS; OPTICAL MICROSCOPY; RAMAN SPECTRA; SPECTROSCOPY; SPUTTERING; SUBSTRATES; THIN FILMS; X-RAY DIFFRACTION

Citation Formats

Aji, A. S., E-mail: yudi@fi.itb.ac.id, and Darma, Y., E-mail: yudi@fi.itb.ac.id. Spectroscopy analysis of graphene like deposition using DC unbalanced magnetron sputtering on γ‐Al{sub 2}O{sub 3} buffer layer. United States: N. p., 2014. Web. doi:10.1063/1.4866758.
Aji, A. S., E-mail: yudi@fi.itb.ac.id, & Darma, Y., E-mail: yudi@fi.itb.ac.id. Spectroscopy analysis of graphene like deposition using DC unbalanced magnetron sputtering on γ‐Al{sub 2}O{sub 3} buffer layer. United States. https://doi.org/10.1063/1.4866758
Aji, A. S., E-mail: yudi@fi.itb.ac.id, and Darma, Y., E-mail: yudi@fi.itb.ac.id. 2014. "Spectroscopy analysis of graphene like deposition using DC unbalanced magnetron sputtering on γ‐Al{sub 2}O{sub 3} buffer layer". United States. https://doi.org/10.1063/1.4866758.
@article{osti_22266026,
title = {Spectroscopy analysis of graphene like deposition using DC unbalanced magnetron sputtering on γ‐Al{sub 2}O{sub 3} buffer layer},
author = {Aji, A. S., E-mail: yudi@fi.itb.ac.id and Darma, Y., E-mail: yudi@fi.itb.ac.id},
abstractNote = {In this work, graphene-like deposition using DC unbalanced magnetron-sputtering technique on γ‐Al{sub 2}O{sub 3} layer at low temperature has been systematically studied. The γ‐Al{sub 2}O{sub 3} was growth on silicon substrate using thermal evaporation of Al wire and continuing with dry oxidation of Al at 550 °C. Sputtering process were carried out using Fe-doped carbon pellet as a target by maintain the chamber pressure of 4.6×10{sup −2} Torr at substrate temperature of 300 °C for time deposition range of 1 to 4 hours. The quality of Al{sub 2}O{sub 3} on Si(100) and the characteristic of carbon thin film on γ‐Al{sub 2}O{sub 3} were analized by mean XRD, opctical microscopy, EDAX, FTIR, and Raman spectra. XRD and optical microscopy analysis shows that Al{sub 2}O{sub 3} film is growth uniformly on Si substrate and forming the γ phase of Al{sub 2}O{sub 3}. Raman and FTIR spectra confirm the formation of graphene like carbon layer on Al{sub 2}O{sub 3}. Additionally, thermal annealing for some sample series have been performed to study their structural stability. The change of atomic structure due to thermal annealing were analized by XRD spectra. The quality and the number of graphene layers are investigated by using Raman spectra peaks analysis.},
doi = {10.1063/1.4866758},
url = {https://www.osti.gov/biblio/22266026}, journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1586,
place = {United States},
year = {Mon Feb 24 00:00:00 EST 2014},
month = {Mon Feb 24 00:00:00 EST 2014}
}