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Title: Structure and electrical characterization of gallium arsenide nanowires with different V/III ratio growth parameters

Gallium arsenide (GaAs) nanowires were grown vertically on GaAs(111)B substrate by gold-assisted using metal-organic chemical vapour deposition. Field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and conductivity atomic force microscopy (CAFM) analysis were carried out to investigate the effects of V/III ratio on structural properties and current-voltage changes in the wires. Results show that GaAs NWs grow preferably in the wurtzite crystal structure than zinc blende crystal structure with increasing V/III ratio. Additionally, CAFM studies have revealed that zincblende nanowires indicate ohmic characteristic compared to oscillation current occurred for wurtzite structures. The GaAs NWs with high quality structures are needed in solar cells technology for trapping energy that directly converts of sunlight into electricity with maximum capacity.
Authors:
;  [1] ; ;  [2]
  1. Sustainability Research Alliance, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia)
  2. Physic Department, Faculty of Science, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia)
Publication Date:
OSTI Identifier:
22266016
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1588; Journal Issue: 1; Conference: 4. international meeting on frontiers in physics, Kuala Lumpur (Malaysia), 27-30 Aug 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; ELECTRIC POTENTIAL; FIELD EMISSION; GALLIUM ARSENIDES; ORGANOMETALLIC COMPOUNDS; OSCILLATIONS; QUANTUM WIRES; SCANNING ELECTRON MICROSCOPY; SOLAR CELLS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; ZINC SULFIDES