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Title: The effect of spin-orbit coupling in band structure of few-layer graphene

Topological insulators are electronic materials that have a bulk band gap like an ordinary insulator but have protected conducting states on their edge or surface. This can be happened due to spin-orbit coupling and time-reversal symmetry. Moreover, the edge current flows through their edge or surface depends on its spin orientation and also it is robust against non-magnetic impurities. Therefore, topological insulators are predicted to be useful ranging from spintronics to quantum computation. Graphene was first predicted to be the precursor of topological insulator by Kane-Mele. They developed a Hamiltonian model to describe the gap opening in graphene. In this work, we investigate the band structure of few-layer graphene by using this model with analytical approach. The results of our calculations show that the gap opening occurs at K and K’ point, not only in single layer, but also in bilayer and trilayer graphene.
Authors:
;  [1]
  1. Department of Physics, Institut Teknologi Bandung, Jalan Ganesa 10, Bandung 40132 (Indonesia)
Publication Date:
OSTI Identifier:
22265971
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1589; Journal Issue: 1; Conference: ICMNS 2012: 4. international conference on mathematics and natural sciences: Science for health, food and sustainable energy, Bandung (Indonesia), 8-9 Nov 2012; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; GRAPHENE; HAMILTONIANS; LAYERS; L-S COUPLING; QUANTUM COMPUTERS; SPIN ORIENTATION; SURFACES