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Title: Simulation of quantum dots size and spacing effect for intermediate band solar cell application based on InAs quantum dots arrangement in GaAs

Intermediate band solar cell (IBSC) has become a promising technology in increasing solar cell efficiency. In this work we compare absorption coefficient profile between InAs quantum dots with GaAs bulk. We calculate the efficiency of GaAs bulk and GaAs doped with 2, 5, and 10 nm InAs quantum dot. Effective distances in quantum dot arrangement based on electron tunneling consideration were also calculated. We presented a simple calculation method with low computing power demand. Results showed that arrangement of quantum dot InAs in GaAs can increase solar cell efficiency from 23.9 % initially up to 60.4%. The effective distance between two quantum dots was found 2 nm in order to give adequate distance to prevent electron tunneling and wave functions overlap.
Authors:
; ;  [1]
  1. Physical Vapor Deposition Laboratory, Physics of Material Electronics Research, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Jl. Ganesha 10, Bandung 40132 (Indonesia)
Publication Date:
OSTI Identifier:
22265967
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1589; Journal Issue: 1; Conference: ICMNS 2012: 4. international conference on mathematics and natural sciences: Science for health, food and sustainable energy, Bandung (Indonesia), 8-9 Nov 2012; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION; CALCULATION METHODS; DOPED MATERIALS; EFFICIENCY; GALLIUM ARSENIDES; INDIUM ARSENIDES; POWER DEMAND; QUANTUM DOTS; SIMULATION; SOLAR CELLS; TUNNEL EFFECT