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Title: HF treatment effect for carbon deposition on silicon (111) by DC sputtering technique

Surface modifications of Si (111) substrate by HF solution for thin film carbon deposition have been systematically studied. Thin film carbon on Si (111) has been deposited using DC Unbalanced Magnetron Sputtering with carbon pellet doped by 5% Fe as the target. EDAX characterization confirmed that the carbon fraction on Si substrate much higher by dipping a clean Si substrate by HF solution before sputtering process in comparison with carbon fraction on Si substrate just after conventional RCA. Moreover, SEM and AFM images show the uniform thin film carbon on Si with HF treatment, in contrast to the Si without HF solution treatment. These experimental results suggest that HF treatment of Si surface provide Si-H bonds on top Si surface that useful to enhance the carbon deposition during sputtering process. Furthermore, we investigate the thermal stability of thin film carbon on Si by thermal annealing process up to 900 °C. Atomic arrangements during annealing process were characterized by Raman spectroscopy. Raman spectra indicate that thin film carbon on Si is remaining unchanged until 600 °C and carbon atoms start to diffuse toward Si substrate after annealing at 900 °C.
Authors:
;  [1]
  1. Quantum Semiconductor and Devices Lab., Physics of Material Electronics Research Division, Department of Physics, Institut Teknologi Bandung (Indonesia)
Publication Date:
OSTI Identifier:
22265963
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1589; Journal Issue: 1; Conference: ICMNS 2012: 4. international conference on mathematics and natural sciences: Science for health, food and sustainable energy, Bandung (Indonesia), 8-9 Nov 2012; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE; ANNEALING; ATOMIC FORCE MICROSCOPY; CARBON; DEPOSITION; DEPOSITS; DOPED MATERIALS; MAGNETRONS; RAMAN SPECTRA; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON; SPUTTERING; SUBSTRATES; SURFACES; THIN FILMS