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Title: The evolvement of the transport mechanism with the ensemble density of Si quantum dots

In this review I will try to suggest a comprehensive understanding of the transport mechanisms in three dimensional systems of Si quantum dots (QDs) from the single QD to the very dense ensembles. This understanding is based on our systematic microscopic and macroscopic electrical measurements as a function of the density of Si nanocrystallites. In particular, the role of quantum confinement and Coulomb blockade effects in the transport will be discussed and the concept of QDs' 'touching' will be applied. This consideration will enable to reveal the presence of two transitions, a local carrier deconfinement transition and a percolation transition at which these effects are reminiscent of those found in the single QD. It is hoped that our discussion of the evolvement of the transport with the density of the QDs will provide guidance for the understanding of ensembles of semiconductor QDs in general and ensembles of Si QDs in particular.
Authors:
 [1]
  1. The Racah Institue of Physics, The Hebrew University, Jerusalen 91904 (Israel)
Publication Date:
OSTI Identifier:
22265943
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1590; Journal Issue: 1; Conference: International conference on electronic, photonic, plasmonic and magnetic properties of nanomaterials, London (Canada), 12-16 Aug 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; DENSITY; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; THREE-DIMENSIONAL CALCULATIONS