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Title: Low-frequency 1/f noise in MoS{sub 2} transistors: Relative contributions of the channel and contacts

We report on the results of the low-frequency (1/f, where f is frequency) noise measurements in MoS{sub 2} field-effect transistors revealing the relative contributions of the MoS{sub 2} channel and Ti/Au contacts to the overall noise level. The investigation of the 1/f noise was performed for both as fabricated and aged transistors. It was established that the McWhorter model of the carrier number fluctuations describes well the 1/f noise in MoS{sub 2} transistors, in contrast to what is observed in graphene devices. The trap densities extracted from the 1/f noise data for MoS{sub 2} transistors, are 2 × 10{sup 19} eV{sup −1}cm{sup −3} and 2.5 × 10{sup 20} eV{sup −1}cm{sup −3} for the as fabricated and aged devices, respectively. It was found that the increase in the noise level of the aged MoS{sub 2} transistors is due to the channel rather than the contact degradation. The obtained results are important for the proposed electronic applications of MoS{sub 2} and other van der Waals materials.
Authors:
;  [1] ;  [2] ;  [3] ;  [4] ; ;  [1] ;  [5] ;  [3]
  1. Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California – Riverside, Riverside, California 92521 (United States)
  2. Materials Science and Engineering Program, Bourns College of Engineering, University of California – Riverside, Riverside, California 92521 (United States)
  3. Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)
  4. (Russian Federation)
  5. (United States)
Publication Date:
OSTI Identifier:
22265916
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 77 NANOSCIENCE AND NANOTECHNOLOGY; AGING; EQUIPMENT; EVALUATION; FIELD EFFECT TRANSISTORS; FLUCTUATIONS; GOLD; GRAPHENE; MOLYBDENUM SULFIDES; NOISE; TITANIUM