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Title: Compositional characterization of atomic layer deposited alumina

As the microelectronic industry demands feature size in the order of few and sub nanometer regime, the film composition and other film properties become critical issues and ALD has emerged as the choice of industry. Aluminum oxide is a material with wide applications in electronic and optoelectronic devices and protective and ion barrier layers. Al{sub 2}O{sub 3} is an excellent dielectric because of its large band gap (8.7eV), large band offsets with silicon. We have deposited thin layers of alumina on silicon wafer (p-type) for gate dielectric applications by ALD technique and compositional characterizations of the deposited thin films were done using EDS, XPS and FTIR spectra.
Authors:
; ;  [1]
  1. Department of Instrumentation, Cochin University of Science and Technology, Cochin-22, Kerala (India)
Publication Date:
OSTI Identifier:
22264092
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1576; Journal Issue: 1; Conference: OMTAT 2013: 2. international conference on optoelectronic materials and thin films for advanced technology, Kochi, Kerala (India), 3-5 Jan 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; ALUMINIUM OXIDES; DEPOSITION; DEPOSITS; DIELECTRIC MATERIALS; FOURIER TRANSFORMATION; INFRARED SPECTRA; SILICON; THIN FILMS; X-RAY PHOTOELECTRON SPECTROSCOPY