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Title: Structural and dielectric properties of Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin films grown by PLD

Ferroelectric thin films of Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} (BST) were deposited on Si/SiO{sub 2}/TiO{sub 2}/Pt (PtSi) substrate by pulsed laser deposition (PLD). Crystalline films with perovskite structure were obtained without post-deposition annealing. Phase purity of the deposited films was confirmed by x-ray diffraction. The lowest value of FWHM obtained for the film deposited at oxygen pressure 5.4×10{sup −4} mbar and substrate temperature 600°C, indicates the high crystallinity of the film. The room temperature dielectric constant at 100 kHz was 85. Butterfly loop, which is the characteristic of ferroelectric materials, was obtained in the regime of −4 to +4V. The leakage current density was nearly 9×10{sup −13} Acm{sup −2}.
Authors:
; ;  [1]
  1. Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kerala (India)
Publication Date:
OSTI Identifier:
22264015
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1576; Journal Issue: 1; Conference: OMTAT 2013: 2. international conference on optoelectronic materials and thin films for advanced technology, Kochi, Kerala (India), 3-5 Jan 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; ANNEALING; DENSITY; DEPOSITS; ENERGY BEAM DEPOSITION; FERROELECTRIC MATERIALS; LASER RADIATION; LEAKAGE CURRENT; OXYGEN; PERMITTIVITY; PEROVSKITE; PULSED IRRADIATION; SILICA; SILICON OXIDES; SUBSTRATES; THIN FILMS; TITANIUM OXIDES; X-RAY DIFFRACTION