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Title: Effect of annealing temperature on optical and electrical properties of ZrO{sub 2}−SnO{sub 2} based nanocomposite thin films

Transparent nanocomposite ZrO{sub 2}−SnO{sub 2} thin films were prepared by sol-gel dip-coating technique. Films were annealed at 500°C, 800°C and 1200°C respectively. X-ray diffraction(XRD) spectra showed a mixture of three phases: tetragonal ZrO{sub 2} and SnO{sub 2} and orthorhombic ZrSnO{sub 4}. The grain size of all the three phases' increased with annealing temperature. An average transmittance greater than 85%(in UV-Visible region) is observed for all the films. The band gap for the films decreased from 4.79 eV to 4.62 eV with increase in annealing temperature from 500 to 1200 °C. The electrical resistivity increased with increase in annealing temperature. Such composite ZrO{sub 2}−SnO{sub 2} films can be used in many applications and in optoelectronic devices.
Authors:
; ; ;  [1]
  1. Thin film Laboratory, Post Graduate and Research Department of Physics, Mar Ivanios College, Thiruvananthapuram 695 015 (India)
Publication Date:
OSTI Identifier:
22264010
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1576; Journal Issue: 1; Conference: OMTAT 2013: 2. international conference on optoelectronic materials and thin films for advanced technology, Kochi, Kerala (India), 3-5 Jan 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ANNEALING; DIP COATING; ELECTRIC CONDUCTIVITY; GRAIN SIZE; MIXTURES; ORTHORHOMBIC LATTICES; SOL-GEL PROCESS; SPECTRA; THIN FILMS; TIN OXIDES; X-RAY DIFFRACTION; ZIRCONIUM OXIDES