Growth mechanism of Cobalt(II) Phthalocyanine(CoPc) thin films on SiO{sub 2} and muscovite substrates
- Department of Physics, Indian Institute of Technology Guwahati, Guwahati-781039 (India)
- Centre for Nano Technology, Indian Institute of Technology Guwahati, Guwahati-781039 (India)
Thin films of Cobalt(II) Phthalocyanine (CoPc) were grown by thermal evaporation technique on two different substrates namely SiO{sub 2} and atomically cleaned muscovite mica(001) at various substrate temperatures. Deposition rate has been maintained to 0.3Å/sec during the growth of the films. The growth process is studied by means of atomic force microscopy (AFM). Films on SiO{sub 2} exhibit only three-dimensional islands and uniformity of these islands improved with substrate temperatures, whereas films on mica (001) consist of long oriented percolated structures. The results revealed that the growth mechanism of CoPc strongly depends on substrate temperatures as well as nature of substrate used. Optical properties were characterized by UV-Visible spectroscopy and structural properties were studied using X-ray diffraction.
- OSTI ID:
- 22264005
- Journal Information:
- AIP Conference Proceedings, Vol. 1576, Issue 1; Conference: OMTAT 2013: 2. international conference on optoelectronic materials and thin films for advanced technology, Kochi, Kerala (India), 3-5 Jan 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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